IMAGE SENSOR AND METHOD FOR MANUFACTURING THEREOF

An image sensor and a manufacturing method thereof are provided to prevent the dishing phenomenon of plug by narrowly forming the width of the plug exposed on the inter-layer insulating layer of the peripheral circuit region. The first substrate(10) comprises a pixel region(A) and a peripheral circu...

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Bibliographische Detailangaben
1. Verfasser:	PARK, DONG BIN
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	An image sensor and a manufacturing method thereof are provided to prevent the dishing phenomenon of plug by narrowly forming the width of the plug exposed on the inter-layer insulating layer of the peripheral circuit region. The first substrate(10) comprises a pixel region(A) and a peripheral circuit region(B). An inter-layer insulating layer(20) including a metal wiring(30) is formed on the first substrate. An element separating layer(250) is formed on the inter-layer insulating layer. An upper electrode(260) is connected to the metal wiring, and is arranged on the element separating layer. A photodiode(200) is arranged on the inter-layer insulating layer of the pixel region. The metal wiring comprises the metal layer pattern and a plug(18). The element separating layer comprises a via hole(257).