IMAGE SENSOR AND METHOF FOR MANUFACTURING THEREOF

IMAGE SENSOR AND METHOF FOR MANUFACTURING THEREOF

An image sensor and a manufacturing method thereof are provide to improve the light-gathering efficiency of photodiode by forming a concave micro lens at the neighboring region of convex micro lens. A semiconductor substrate(10) comprises a pixel region(A) and a logic region(B). An inter-layer insul...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: SHIM, KYU CHEOL
Format: Patent
Sprache:eng ; kor
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:An image sensor and a manufacturing method thereof are provide to improve the light-gathering efficiency of photodiode by forming a concave micro lens at the neighboring region of convex micro lens. A semiconductor substrate(10) comprises a pixel region(A) and a logic region(B). An inter-layer insulating layer(30) comprises the metal wiring arranged on the semiconductor substrate. The first color filter(50) is arranged on the inter-layer insulating layer corresponding to the pixel region. The second color filter(60) is arranged on the inter-layer insulating layer corresponding to the logic region. The first planarization layer(70) is arranged on the first and second color filters. The second planarization layer(80) is arranged on the first planarization layer.