METHOD FOR FORMING A PATTERN OF SEMICONDUCTOR DEVICE

A pattern formation method of a semiconductor device is provided to improve the electrical characteristic of the semiconductor device by increasing the process margin of the double patterning related semiconductor photo process. A pattern formation method of a semiconductor device comprises a configuration stage of an original copy layout, an application phase of an optical proximity correction, and an application phase of an exposure process. A configuration stage of an original copy layout performs to set up the respective original copy layout corresponding to a first pattern(510) and a second pattern in the first mask(500) and the second mask. A first pattern is the bar pattern of a main part shape(510a). A second pattern is the bar pattern with a shape of convex portion. The application phase of the optical proximity correction is performed the optical proximity correction in the original copy layout to amend the edges of the first and 2 patterns to the pad type.