APPARATUS AND METHOD FOR SUPPLYING SOURCE GAS

A source gas supply apparatus and a source gas supply method are provided to control correctly and uniformly deposition pressure by supplying constantly source gases to a deposition chamber. A source gas supply apparatus(100) supplies source gases to be used in a thin film deposition process using a...

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Bibliographische Detailangaben
Hauptverfasser:	JANG, TAEK YONG, JANG, HEE SUP, LEE, BYOUNG IL
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A source gas supply apparatus and a source gas supply method are provided to control correctly and uniformly deposition pressure by supplying constantly source gases to a deposition chamber. A source gas supply apparatus(100) supplies source gases to be used in a thin film deposition process using a chemical vapor deposition method, to a deposition chamber. The source gas supply apparatus includes a source material evaporation unit(110), a first chamber(150a), and a second chamber(150b). The source material evaporation unit heats a source material(120) in order to form a source. In the first chamber, the source gases are deposited on a deposition board(160). The second chamber is used for separating the source gases from the deposition board of the first chamber.