NONVOLATILE MEMORY DEVICE AND METHOD OF FORMING THE SAME

A nonvolatile memory device and a method of forming the same are provided to prevent miss-alignment, under-etch, and over-etch in forming a common source line. An element isolation film(102) defines an active areas on the semiconductor substrate(100). A pair of string selection transistors which are adjacent each other and a pair of ground select transistors are formed on an active areas. A plurality of memory cell transistors is connected between the string selection transistors and the ground-selection transistors through a string. In a common source line, a first silicon film grown as a selective epitaxial growth and a first metal silicide layer on the first silicon film are on the pair of the ground transistors.