NON-VOLATILE MEMORY DEVICE

A non-volatile memory device is provided to reduce a cell size and to improve data retention capability by performing the data retention and data conversion by using a control line without depending on the non volatile material. An active region(30) is divided into a first junction region(32) and a second junction region(34). A bit line(36) is formed in the first junction region and is electrically connected to the first junction region through a first contact(37). A word line(38) is formed in an upper part of a channel between the first junction region and the second junction region. A cell is formed in the second junction region and is electrically connected to the second junction region through a second contact(49). An upper electrode(40), a first control line(46), a non-volatile material layer(44), a second control line(48), and a lower electrode(42) are successively stacked. The data retention and data conversion of the non-volatile material layer are performed by the electrical condition between the first control line and the second control line.