DUAL IMAGE SENSOR, AND METHOD OF MANUFACTURING THEREOF

Embodiments relate to a dual image sensor which includes a first device including a first wafer having a first inclined step, a first reflective face on an inclined plane on the first inclined step, at least one first microlens over a lower end surface adjacent the first inclined step, and a first v...

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Bibliographische Detailangaben
1. Verfasser:	YOON, JOON KU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	Embodiments relate to a dual image sensor which includes a first device including a first wafer having a first inclined step, a first reflective face on an inclined plane on the first inclined step, at least one first microlens over a lower end surface adjacent the first inclined step, and a first via-hole filled with metal on an upper end face adjacent the first inclined step. A second device in the dual image sensor includes a second wafer having a second inclined step, a second reflective face on an inclined plane on the second inclined step, and at least one second microlens over a first portion of an upper end face adjacent the second inclined step. A dual image sensor is formed by connecting the metal in the first via-hole and the metal in the second via-hole together. The dual image sensor is capable of imaging light incident from one or both sides as well as light incident in front or rear of the image sensor.