METHOD FOR FABRICATING OF CMOS IMAGE SENSOR

METHOD FOR FABRICATING OF CMOS IMAGE SENSOR

A method of manufacturing the CMOS image sensor is provided to minimize the impact on the pixel part by using the mask having the metal pad region. The insulating layer(201) and the metal pad(202) of signal line are formed on the semiconductor substrate(200) including the photo diode. The planarized...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: CHA, SEUNG WON
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A method of manufacturing the CMOS image sensor is provided to minimize the impact on the pixel part by using the mask having the metal pad region. The insulating layer(201) and the metal pad(202) of signal line are formed on the semiconductor substrate(200) including the photo diode. The planarized protective film(203) is formed on the insulating layer including the metal pad. The open part(205) is formed in the metal pad by selectively etching the protective film. The planarization layer is selectively etched. The color filter layer(207) is formed in the upper part of the planarization layer. The micro lens mask pattern defining the micro lens region is formed in the planarization layer. The micro lens is formed in the micro lens mask pattern by performing the reflow process.