FORMATION METHOD OF FINE PATTERNS AND MANUFAUCTURATION METHOD OF SEMICONDUCTOR LIGHT EMITTING DEVICE

A formation method of fine patterns and a manufacturing method of a semiconductor light emitting device are provided to minimize the damage region due to the dry etch by forming a structure through the wet etching of the horizontal direction. A mask(18) having a predetermined pattern is formed on a semiconductor crystal(11). The mask is formed with the photoresist pattern. The photoresist is coated onto the upper side of the semiconductor crystal. The pattern is the one-dimensional line pattern, the periodic pattern like the pattern of two-dimensional three angle lattice or the rectangular lattice. The first pattern(P1) is formed by dry etching the semiconductor crystal. The first pattern is etched to the predetermined depth(d1) of the semiconductor crystal. A damaged region(D) is generated on the whole surface of the micro-pattern of the semiconductor substrate. The damaged region is minimized by the wet etching process.