AG SERIES TRANSPARENT METAL FOR UV LIGHT EMITTING DIODE

An Ag series transparent metal for a ultraviolet light emitting diode is provided to improve the optical permeability and the luminance of the ultraviolet light-emitting device by forming an Ohmic contact between a transparent electrode of the ultraviolet light-emitting device and a p-GaN system semiconductor layer. An n-GaN system semiconductor layer(22) is formed on a substrate(21). An active layer(23) is laminated on the n-type semiconductor layer. A p-GaN system semiconductor layer(24) is formed on the active layer. A transparent electrode(25) consisting of Ag or Ag alloy is evaporated on the p-GaN system semiconductor layer. A p-type metal electrode(26) is formed on the top of one side of the transparent electrode. An n-type metal electrode(27) is formed on the other side of the n-GaN system semiconductor layer.