METHOD MANUFACTURING OF MOSFET DEVICE

METHOD MANUFACTURING OF MOSFET DEVICE

A manufacturing method of the MOSFET device is provided to suppress the diffusion of impurity by forming an ion implantation layer for the diffusion barrier at the lower part of the channel region. A manufacturing method of the MOSFET device injecting the ion within the semiconductor substrate inclu...

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1. Verfasser: KO, MIN GU
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:A manufacturing method of the MOSFET device is provided to suppress the diffusion of impurity by forming an ion implantation layer for the diffusion barrier at the lower part of the channel region. A manufacturing method of the MOSFET device injecting the ion within the semiconductor substrate includes the step for ion-implanting the P- type impurity into the semiconductor substrate in order to form a channel region(240) in a semiconductor substrate(200); the step for ion-implanting either an oxide or a nitride into the semiconductor substrate in which the channel region is formed in order to form an ion implantation layer(250) for the diffusion barrier at the lower part of the channel region.