CLEAN BENCH AND METHOD OF PRODUCING RAW MATERIAL FOR SINGLE CRYSTAL SILICON

CLEAN BENCH AND METHOD OF PRODUCING RAW MATERIAL FOR SINGLE CRYSTAL SILICON

A clean bench and method of producing raw material for single crystal silicon are provided to improve the quality of the raw material for the single-crystal silicon by removing the micropowder of the polycrystalline silicon surface using the ionized cleaning air. The poly-crystal silicon is placed i...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: SAKAI KAZUHIRO, MIYATA YUKIYASU
Format: Patent
Sprache:eng
Schlagworte:
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
CRYSTAL GROWTH
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:A clean bench and method of producing raw material for single crystal silicon are provided to improve the quality of the raw material for the single-crystal silicon by removing the micropowder of the polycrystalline silicon surface using the ionized cleaning air. The poly-crystal silicon is placed in the worktable(2). The cubic body has the top plate(16) covering the upper of the work space and the lateral plates(8a,8b). The supply vent for supplying the clean air is formed in the top plate of cubic body and is formed on the upper side of worktable. The ionizer(20) ionizes the cleaning air supplied from the supply vent to the work space removes the static electricity.