CRYSTALLIZATION METHOD

A crystallization method is provided to extend the crystal duration time and obtain the crystal of large grain size of the large particle by lengthening the scanning time of the pulse laser light. The phase modulation device(2) is installed between the illuminator system(3) and the crystal optical s...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	MASAKIYO MATSUMURA, KAZUFUMI AZUMA, TAKASHI ONO, SHIGEYUKI SHIMOTO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CLADDING OR PLATING BY SOLDERING OR WELDING CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR PERFORMING OPERATIONS SEMICONDUCTOR DEVICES SOLDERING OR UNSOLDERING TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION TECHNICAL SUBJECTS COVERED BY FORMER USPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TRANSPORTING WELDING WORKING BY LASER BEAM
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

container_end_page
container_issue
container_start_page
container_title
container_volume
creator	MASAKIYO MATSUMURA KAZUFUMI AZUMA TAKASHI ONO SHIGEYUKI SHIMOTO
description	A crystallization method is provided to extend the crystal duration time and obtain the crystal of large grain size of the large particle by lengthening the scanning time of the pulse laser light. The phase modulation device(2) is installed between the illuminator system(3) and the crystal optical system(4). The illuminator system comprises the light source(31) outputting the energy light for fusing the non-single crystal semiconductor film of the processed substrate(5), the beam splitter(32) of the light division means, two attenuators(33,35), the beam splitter(34) of the optical composing means and illumination optical system(37).
format	Patent
fullrecord	<record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_KR20090024087A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>KR20090024087A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_KR20090024087A3</originalsourceid><addsrcrecordid>eNrjZBBzDooMDnH08fGMcgzx9PdT8HUN8fB34WFgTUvMKU7lhdLcDMpuriHOHrqpBfnxqcUFicmpeakl8d5BRgYGlgYGRiYGFuaOxsSpAgBNoSBG</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>CRYSTALLIZATION METHOD</title><source>esp@cenet</source><creator>MASAKIYO MATSUMURA ; KAZUFUMI AZUMA ; TAKASHI ONO ; SHIGEYUKI SHIMOTO</creator><creatorcontrib>MASAKIYO MATSUMURA ; KAZUFUMI AZUMA ; TAKASHI ONO ; SHIGEYUKI SHIMOTO</creatorcontrib><description>A crystallization method is provided to extend the crystal duration time and obtain the crystal of large grain size of the large particle by lengthening the scanning time of the pulse laser light. The phase modulation device(2) is installed between the illuminator system(3) and the crystal optical system(4). The illuminator system comprises the light source(31) outputting the energy light for fusing the non-single crystal semiconductor film of the processed substrate(5), the beam splitter(32) of the light division means, two attenuators(33,35), the beam splitter(34) of the optical composing means and illumination optical system(37).</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CLADDING OR PLATING BY SOLDERING OR WELDING ; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC ; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS ; MACHINE TOOLS ; METAL-WORKING NOT OTHERWISE PROVIDED FOR ; PERFORMING OPERATIONS ; SEMICONDUCTOR DEVICES ; SOLDERING OR UNSOLDERING ; TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION ; TECHNICAL SUBJECTS COVERED BY FORMER USPC ; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS ; TRANSPORTING ; WELDING ; WORKING BY LASER BEAM</subject><creationdate>2009</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20090306&DB=EPODOC&CC=KR&NR=20090024087A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20090306&DB=EPODOC&CC=KR&NR=20090024087A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MASAKIYO MATSUMURA</creatorcontrib><creatorcontrib>KAZUFUMI AZUMA</creatorcontrib><creatorcontrib>TAKASHI ONO</creatorcontrib><creatorcontrib>SHIGEYUKI SHIMOTO</creatorcontrib><title>CRYSTALLIZATION METHOD</title><description>A crystallization method is provided to extend the crystal duration time and obtain the crystal of large grain size of the large particle by lengthening the scanning time of the pulse laser light. The phase modulation device(2) is installed between the illuminator system(3) and the crystal optical system(4). The illuminator system comprises the light source(31) outputting the energy light for fusing the non-single crystal semiconductor film of the processed substrate(5), the beam splitter(32) of the light division means, two attenuators(33,35), the beam splitter(34) of the optical composing means and illumination optical system(37).</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CLADDING OR PLATING BY SOLDERING OR WELDING</subject><subject>CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC</subject><subject>GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS</subject><subject>MACHINE TOOLS</subject><subject>METAL-WORKING NOT OTHERWISE PROVIDED FOR</subject><subject>PERFORMING OPERATIONS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SOLDERING OR UNSOLDERING</subject><subject>TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION</subject><subject>TECHNICAL SUBJECTS COVERED BY FORMER USPC</subject><subject>TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS</subject><subject>TRANSPORTING</subject><subject>WELDING</subject><subject>WORKING BY LASER BEAM</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2009</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBBzDooMDnH08fGMcgzx9PdT8HUN8fB34WFgTUvMKU7lhdLcDMpuriHOHrqpBfnxqcUFicmpeakl8d5BRgYGlgYGRiYGFuaOxsSpAgBNoSBG</recordid><startdate>20090306</startdate><enddate>20090306</enddate><creator>MASAKIYO MATSUMURA</creator><creator>KAZUFUMI AZUMA</creator><creator>TAKASHI ONO</creator><creator>SHIGEYUKI SHIMOTO</creator><scope>EVB</scope></search><sort><creationdate>20090306</creationdate><title>CRYSTALLIZATION METHOD</title><author>MASAKIYO MATSUMURA ; KAZUFUMI AZUMA ; TAKASHI ONO ; SHIGEYUKI SHIMOTO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20090024087A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2009</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CLADDING OR PLATING BY SOLDERING OR WELDING</topic><topic>CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC</topic><topic>GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS</topic><topic>MACHINE TOOLS</topic><topic>METAL-WORKING NOT OTHERWISE PROVIDED FOR</topic><topic>PERFORMING OPERATIONS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SOLDERING OR UNSOLDERING</topic><topic>TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION</topic><topic>TECHNICAL SUBJECTS COVERED BY FORMER USPC</topic><topic>TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS</topic><topic>TRANSPORTING</topic><topic>WELDING</topic><topic>WORKING BY LASER BEAM</topic><toplevel>online_resources</toplevel><creatorcontrib>MASAKIYO MATSUMURA</creatorcontrib><creatorcontrib>KAZUFUMI AZUMA</creatorcontrib><creatorcontrib>TAKASHI ONO</creatorcontrib><creatorcontrib>SHIGEYUKI SHIMOTO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MASAKIYO MATSUMURA</au><au>KAZUFUMI AZUMA</au><au>TAKASHI ONO</au><au>SHIGEYUKI SHIMOTO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>CRYSTALLIZATION METHOD</title><date>2009-03-06</date><risdate>2009</risdate><abstract>A crystallization method is provided to extend the crystal duration time and obtain the crystal of large grain size of the large particle by lengthening the scanning time of the pulse laser light. The phase modulation device(2) is installed between the illuminator system(3) and the crystal optical system(4). The illuminator system comprises the light source(31) outputting the energy light for fusing the non-single crystal semiconductor film of the processed substrate(5), the beam splitter(32) of the light division means, two attenuators(33,35), the beam splitter(34) of the optical composing means and illumination optical system(37).</abstract><oa>free_for_read</oa></addata></record>
fulltext	fulltext_linktorsrc
identifier
ispartof
issn
language	eng
recordid	cdi_epo_espacenet_KR20090024087A
source	esp@cenet
subjects	BASIC ELECTRIC ELEMENTS CLADDING OR PLATING BY SOLDERING OR WELDING CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR PERFORMING OPERATIONS SEMICONDUCTOR DEVICES SOLDERING OR UNSOLDERING TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION TECHNICAL SUBJECTS COVERED BY FORMER USPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TRANSPORTING WELDING WORKING BY LASER BEAM
title	CRYSTALLIZATION METHOD
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-06T14%3A41%3A54IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=MASAKIYO%20MATSUMURA&rft.date=2009-03-06&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EKR20090024087A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true