CRYSTALLIZATION METHOD

A crystallization method is provided to extend the crystal duration time and obtain the crystal of large grain size of the large particle by lengthening the scanning time of the pulse laser light. The phase modulation device(2) is installed between the illuminator system(3) and the crystal optical s...

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Bibliographische Detailangaben
Hauptverfasser:	MASAKIYO MATSUMURA, KAZUFUMI AZUMA, TAKASHI ONO, SHIGEYUKI SHIMOTO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CLADDING OR PLATING BY SOLDERING OR WELDING CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR PERFORMING OPERATIONS SEMICONDUCTOR DEVICES SOLDERING OR UNSOLDERING TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION TECHNICAL SUBJECTS COVERED BY FORMER USPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TRANSPORTING WELDING WORKING BY LASER BEAM
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Beschreibung
Zusammenfassung:	A crystallization method is provided to extend the crystal duration time and obtain the crystal of large grain size of the large particle by lengthening the scanning time of the pulse laser light. The phase modulation device(2) is installed between the illuminator system(3) and the crystal optical system(4). The illuminator system comprises the light source(31) outputting the energy light for fusing the non-single crystal semiconductor film of the processed substrate(5), the beam splitter(32) of the light division means, two attenuators(33,35), the beam splitter(34) of the optical composing means and illumination optical system(37).