METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

A formation method of a semiconductor device is provided to improve characteristic of an oxide film and a nitride film by forming an oxide film at the lower part of a nitride film while forming the nitride film by nitrifying a part of the surface of the substrate and lifting-up the nitride film by o...

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Bibliographische Detailangaben
Hauptverfasser:	KIM, CHUL SUNG, HEO, JIN HWA
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A formation method of a semiconductor device is provided to improve characteristic of an oxide film and a nitride film by forming an oxide film at the lower part of a nitride film while forming the nitride film by nitrifying a part of the surface of the substrate and lifting-up the nitride film by oxidizing the nitride film. A nitride film(102) is formed on a substrate(100). The nitride film is oxidized and a first oxide film(104) is formed on the interface of the nitride film and the substrate. A second oxide film(106) is formed on the nitride film. A tunnel insulating layer(108) including a first oxide film, a nitride film and a second oxide film is formed. A charge trap layer is formed on the tunnel insulating layer. A blocking insulation film is formed on the charge trap layer. A conductive film is formed on the blocking insulation film.