CLEANING METHODS FOR SEMICONDUCTOR MANUFACTURING APPARATUS

A cleaning methods for a semiconductor manufacturing apparatus is provided to increase removal rate of particles with minimizing damage of electrode by applying high frequency power and DC bias to electrode in supplying cleaning gas inside a chamber. Cleaning gas is supplied inside a chamber(201) including electrodes(207) in order to wash a semiconductor equipment. High frequency power and direct-current bias are applied at the electrode and particles(210) adhered to the electrode are removed. The cleaning gas is supplied to the inside of the chamber through the holes of the electrode. The high frequency power is applied to the frequency of 40 - 200 MHz. The direct-current bias is applied into changeably selected fixed voltage in the range of -50 ~ -500V. The cleaning gas is one selected in the group consisting of the gas containing chlorine, the gas containing boron, the gas containing carbon and fluorine and combinations using the same.