SEMICONDUCTOR DEVICE
A semiconductor device is provided to operate an n-type metal oxide semiconductor transistor for electrostatic discharge protection uniformly even in case an interconnector is vertically introduced toward channel width of an n-type metal oxide semiconductor transistor for the electrostatic discharge...
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| creator | TAKASHINA TAKAYUKI TAKASU HIROAKI YAMAMOTO SUKEHIRO |
| description | A semiconductor device is provided to operate an n-type metal oxide semiconductor transistor for electrostatic discharge protection uniformly even in case an interconnector is vertically introduced toward channel width of an n-type metal oxide semiconductor transistor for the electrostatic discharge protection. A semiconductor device comprises an n-type metal oxide semiconductor transistor for electrostatic discharge protection. The n-type metal oxide semiconductor transistor for the electrostatic discharge protection comprises drain regions connected with a first metallic interconnector(901) and area-sources connected with the other first metallic interconnector and gate electrodes. One side among the first metallic interconnector and the other first metallic interconnector is connected to metallic interconnectors of a plurality of layers except a first metallic interconnector. The area-sources comprises the metallic interconnects of a plurality of layers except the first metallic interconnector and via holes(601) for electrically connecting the other first metallic interconnector. The longer the distance of the interconnector connected to the n-type metal oxide semiconductor transistor for the electrostatic discharge protection is, the more via holes are built up. |
| format | Patent |
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A semiconductor device comprises an n-type metal oxide semiconductor transistor for electrostatic discharge protection. The n-type metal oxide semiconductor transistor for the electrostatic discharge protection comprises drain regions connected with a first metallic interconnector(901) and area-sources connected with the other first metallic interconnector and gate electrodes. One side among the first metallic interconnector and the other first metallic interconnector is connected to metallic interconnectors of a plurality of layers except a first metallic interconnector. The area-sources comprises the metallic interconnects of a plurality of layers except the first metallic interconnector and via holes(601) for electrically connecting the other first metallic interconnector. The longer the distance of the interconnector connected to the n-type metal oxide semiconductor transistor for the electrostatic discharge protection is, the more via holes are built up.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2009</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20090226&DB=EPODOC&CC=KR&NR=20090020532A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20090226&DB=EPODOC&CC=KR&NR=20090020532A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>TAKASHINA TAKAYUKI</creatorcontrib><creatorcontrib>TAKASU HIROAKI</creatorcontrib><creatorcontrib>YAMAMOTO SUKEHIRO</creatorcontrib><title>SEMICONDUCTOR DEVICE</title><description>A semiconductor device is provided to operate an n-type metal oxide semiconductor transistor for electrostatic discharge protection uniformly even in case an interconnector is vertically introduced toward channel width of an n-type metal oxide semiconductor transistor for the electrostatic discharge protection. A semiconductor device comprises an n-type metal oxide semiconductor transistor for electrostatic discharge protection. The n-type metal oxide semiconductor transistor for the electrostatic discharge protection comprises drain regions connected with a first metallic interconnector(901) and area-sources connected with the other first metallic interconnector and gate electrodes. One side among the first metallic interconnector and the other first metallic interconnector is connected to metallic interconnectors of a plurality of layers except a first metallic interconnector. The area-sources comprises the metallic interconnects of a plurality of layers except the first metallic interconnector and via holes(601) for electrically connecting the other first metallic interconnector. 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A semiconductor device comprises an n-type metal oxide semiconductor transistor for electrostatic discharge protection. The n-type metal oxide semiconductor transistor for the electrostatic discharge protection comprises drain regions connected with a first metallic interconnector(901) and area-sources connected with the other first metallic interconnector and gate electrodes. One side among the first metallic interconnector and the other first metallic interconnector is connected to metallic interconnectors of a plurality of layers except a first metallic interconnector. The area-sources comprises the metallic interconnects of a plurality of layers except the first metallic interconnector and via holes(601) for electrically connecting the other first metallic interconnector. The longer the distance of the interconnector connected to the n-type metal oxide semiconductor transistor for the electrostatic discharge protection is, the more via holes are built up.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | SEMICONDUCTOR DEVICE |
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