SEMICONDUCTOR DEVICE

A semiconductor device is provided to operate an n-type metal oxide semiconductor transistor for electrostatic discharge protection uniformly even in case an interconnector is vertically introduced toward channel width of an n-type metal oxide semiconductor transistor for the electrostatic discharge protection. A semiconductor device comprises an n-type metal oxide semiconductor transistor for electrostatic discharge protection. The n-type metal oxide semiconductor transistor for the electrostatic discharge protection comprises drain regions connected with a first metallic interconnector(901) and area-sources connected with the other first metallic interconnector and gate electrodes. One side among the first metallic interconnector and the other first metallic interconnector is connected to metallic interconnectors of a plurality of layers except a first metallic interconnector. The area-sources comprises the metallic interconnects of a plurality of layers except the first metallic interconnector and via holes(601) for electrically connecting the other first metallic interconnector. The longer the distance of the interconnector connected to the n-type metal oxide semiconductor transistor for the electrostatic discharge protection is, the more via holes are built up.