METHOD OF FORMING A FERROELECTRIC CAPACITOR AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME
A method of forming a ferroelectric capacitor and method of manufacturing a semiconductor device using the same are provided to form the crystalline diffusion barrier having low defects by forming a crystalline diffusion barrier in the high temperature. The bottom electrode film(105) is formed on th...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A method of forming a ferroelectric capacitor and method of manufacturing a semiconductor device using the same are provided to form the crystalline diffusion barrier having low defects by forming a crystalline diffusion barrier in the high temperature. The bottom electrode film(105) is formed on the substrate(100). The first crystalline diffusion barrier(150) which prevents diffusion of the ferroelectric film component is formed on the bottom electrode layer. The ferroelectric film is formed on the first crystalline diffusion barrier. The upper electrode is formed on the ferroelectric film. The first crystalline diffusion barrier is formed by using the strontium ruthenate(SrRuO3: SRO). The first crystalline diffusion barrier is formed by the sputtering process of the temperature of 450°C or 550°C. |
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