PLAZMA ETCHING METHOD FOR FORMING PIRAMIDAL TEXTURE ON SILICON SURFACE AND THE APPARATUS USED THEREFOR

A plasma etching method for forming pyramidal structure on silicone surface and an apparatus thereof are provided to simplify structure of an etching apparatus by omitting a separate apparatus for maintaining high vacuum state. A plasma etching apparatus includes a holder(30) and a plasma generator(...

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Bibliographische Detailangaben
Hauptverfasser:	LEE, HEON JU, PLAKSIN VADIM YU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION SEMICONDUCTOR DEVICES TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE
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Beschreibung
Zusammenfassung:	A plasma etching method for forming pyramidal structure on silicone surface and an apparatus thereof are provided to simplify structure of an etching apparatus by omitting a separate apparatus for maintaining high vacuum state. A plasma etching apparatus includes a holder(30) and a plasma generator(10). The holder supports a silicone substrate(1) inside an etching reactor(40). A gas injection nozzle(19) is positioned in one side of the plasma generator. An etching gas is supplied to the plasma etching apparatus through an etching gas supplying device(20), and plasma is generated. An etching gas particle activated by the plasma is spayed on the silicone substrate. A pyramidal structure is formed on the silicone substrate through an etching with the etching gas particle.