CHARGE TRAP MEMORY DEVICE

CHARGE TRAP MEMORY DEVICE

A charge trap type memory device including a charge trapping layer is provided to improve retention characteristic and electric charge mobility horizontally like metal. As to a non-volatile memory device in which a tunnel insulating layer(120), a charge trapping layer(130), a blocking insulation fil...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: JUNG, RAN JU, SEO, SUN AE, CHUNG, HYUN JONG, KIM, DONG CHUL, LEE, CHANG WON
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A charge trap type memory device including a charge trapping layer is provided to improve retention characteristic and electric charge mobility horizontally like metal. As to a non-volatile memory device in which a tunnel insulating layer(120), a charge trapping layer(130), a blocking insulation film(140) and a top gate electrode(150) are successively laminated on a semiconductor substrate, the charge trapping layer is made of grapheme. The charge trapping layer is made of a plurality of grapheme layers. The tunnel insulating layer is made of silicon carbide. The blocking insulation film is an alumina or a hafnium oxide layer.