NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE

A nitride semiconductor light emitting device is provided to improve the effect of the current spreading diffusing from N type electrode to P-contact by growing the nitride semiconductor crystalline layer on the etching section. A nitride semiconductor light emitting diode includes a substrate(110) and an etching part of which shape is etched by 3D. A buffer layer(120) formed on the equation each part and a n-type nitride semiconductor layer(130) formed on the buffer layer are included. An active layer(140) on n-type nitride semiconductor layer and p-type nitride semiconductor layer(150) on the active layer are included. Epitaxial-grown is formed the nitride semiconductor crystalline layer by including a P type electrode formed on the p-type nitride semiconductor layer and a N type electrode formed on the N-type nitride semiconductor layer.