CHEMICAL VAPOR DEPOSITED SILICON CARBIDE ARTICLES

Chemical vapor deposited silicon carbide articles are provided to maintain tight tolerance during the assembling step of parts connected with each other by sintered ceramics, and to prevent a gap in joints from being formed. A method for manufacturing chemical vapor deposited silicon carbide article...

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Bibliographische Detailangaben
Hauptverfasser: LAIS KEVIN D, PICKERING MICHAEL A, TRIBA JAMIE L
Format: Patent
Sprache:eng ; kor
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Zusammenfassung:Chemical vapor deposited silicon carbide articles are provided to maintain tight tolerance during the assembling step of parts connected with each other by sintered ceramics, and to prevent a gap in joints from being formed. A method for manufacturing chemical vapor deposited silicon carbide articles includes the steps of: (a) providing a paste, sol, or slurry containing at least one ceramic; (b) applying the paste, sol, or slurry to two chemical vapor deposited silicon carbide parts to combine the parts with each other; (c) drying the paste, sol, or slurry to form a dried composition containing the at least one ceramic around the two chemical vapor deposited silicon carbide parts; and (d) sintering the dried composition to form a sintered ceramic joint. Further, the at least one ceramic is silicon carbide, metal oxide and raw mineral. 화학적 기상 증착된 실리콘 카바이드 물체들 및 이들을 생산하는 방법이 개시된다. 화학적 기상 증착된 실리콘 카바이드 물체들은 소결된 세라믹 조인트들에 의해 함께 결합된 복수 개의 파트들로 구성된다. 조인트들은 물체들의 조인트들에서 공차를 강화하고 유지한다. 물체들은 반도체 공정에 사용될 수 있다.