PHOTOELECTRIC CONVERSION DEVICE AND METHOD OF MANUFACTURING THE SAME

A photoelectric conversion device and a method for manufacturing the same are provided to reduce lowering of incident light by a simple process also in the case where an anti-diffusion layer is provided. A photoelectric conversion device includes a photoelectric conversion element and a multi-layered wiring structure. The photoelectric conversion element is disposed on a semiconductor substrate(111). The multi-layered wiring structure has a plurality of wiring layers(114,117) disposed to sandwich and an interlayer insulation layer therebetween over the semiconductor substrate. An anti-diffusion layer(115) is disposed on an uppermost wire layer among the wire layers to suppress a diffusion of a material forming the uppermost wire layer. The anti-diffusion layer covers regions of the uppermost wire layer and the interlayer insulation layer corresponding to the photoelectric conversion element. A lens(119) is disposed at a region corresponding to the photoelectric conversion element to be formed from a part of the anti-diffusion layer disposed on the uppermost wire layer or be disposed directly contacting with the anti-diffusion layer.