HAFNIUM COMPOUND, HAFNIUM THIN FILM-FORMING MATERIAL AND METHOD FOR FORMING HAFNIUM THIN FILM

A novel hafnium-based compound is provided to be a liquid at room temperature and show high stability, thereby forming a high quality hafnium-based thin film with stability. A hafnium thin film forming material is a hafnium-based compound represented by a formula(1) of LHf(NR^1R^2)3, wherein L is cy...

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Hauptverfasser:	TAZUKE KIYOSHI, KIM, BYUNG SOO, TUBAKITANI AKIHITO, YOO, SEUNG HO, HIRAKI TADAAKI, MIHASHI SATORU
Format:	Patent
Sprache:	eng
Schlagworte:	ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY ORGANIC CHEMISTRY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	A novel hafnium-based compound is provided to be a liquid at room temperature and show high stability, thereby forming a high quality hafnium-based thin film with stability. A hafnium thin film forming material is a hafnium-based compound represented by a formula(1) of LHf(NR^1R^2)3, wherein L is cyclopentadienyl group or substituted cyclopentadienyl group, and each R^1 and R^2 is alkyl, provided that R^1 and R^2 may be the same or different from each other. To form a hafnium thin film through a chemical vapor phase growth technique or an atomic layer controlled growth technique, the hafnium-based compound is used.