METHOD FOR MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

A method for manufacturing semiconductor integrated circuit devices is provided to perform probe inspection without reduction of an operating rate of a probe inspection device. A semiconductor device having a sample image which photographs a surface state of semiconductor wafers having plural chip f...

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1. Verfasser: OKAYAMA MASAO
Format: Patent
Sprache:eng
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Zusammenfassung:A method for manufacturing semiconductor integrated circuit devices is provided to perform probe inspection without reduction of an operating rate of a probe inspection device. A semiconductor device having a sample image which photographs a surface state of semiconductor wafers having plural chip forming areas is provided. A probe card having plural contact terminals to be contacted with plural electrodes of the semiconductor wafers is provided. The contact terminals of the probe card are contacted with the electrodes of a first chip forming area(OGA) selected from the chip forming areas such that an electrical inspection on the first chip forming area is performed. A first image generated from the first forming area and a second forming area(PCA), which is formed around the first forming area, is obtained. The first and second forming areas of the first image are compared with the first and second forming areas of the sample image.