RESPUTTERED COPPER SEED LAYER

A re-sputtered copper seed layer is provided to reduce a size of overhang through an activated sputtering etching and to re-distribute the copper by recessed parts of side walls. A single or repeated sequence opens a via hole(160,162). Copper is electroplated in the via hole to fill the via hole(164...

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Bibliographische Detailangaben
Hauptverfasser:	SUNDARRAJAN ARVID, GOPALRAJA PRABURAM, TANG XIANMIN, LUBBEN DANIEL, FORSTER JOHN, LUO QIAN, FU XINYU, YU JICK, CHUNG HUA, WANG RONGJUN, GUNG TZA JING, SUBRAMANI ANANTHA, CAO JONG
Format:	Patent
Sprache:	eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	A re-sputtered copper seed layer is provided to reduce a size of overhang through an activated sputtering etching and to re-distribute the copper by recessed parts of side walls. A single or repeated sequence opens a via hole(160,162). Copper is electroplated in the via hole to fill the via hole(164). Excessive copper at the outside of the via hole is removed by chemical mechanical polishing(166). The copper is deposited on a 300mm wafer. Parts of bottoms of via side walls are sputtered. A relatively low DC power level is applied to the target, and an RF(Radio Frequency) coil is supplied with power. A thin copper layer is coated on a cut surface on a copper void and the via hole.