THIN FILM TRANSISTOR ARRAY SUBSTRATE OF AND METHOD FOR FABRICATING THE SAME
A horizontal field-type TFT array substrate is provided to prevent color inversion, secure a high aperture ratio by the data line of a linear structure and to prevent signal delay by reducing data line, thereby improving image quality. A gate line(112) is formed on a substrate. A common electrode ha...
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| creator | LEE, JOON YOUP |
| description | A horizontal field-type TFT array substrate is provided to prevent color inversion, secure a high aperture ratio by the data line of a linear structure and to prevent signal delay by reducing data line, thereby improving image quality. A gate line(112) is formed on a substrate. A common electrode has a common line(126) and a ring portion(126b). The common line is formed in parallel with the gate line. The ring portion is diverged from the common line, has a ring structure that the ring portion is folded one time, and defines a pixel area. A data line(118) is formed to cross the data line vertically. A TFT(Thin Film Transistor) has a gate electrode(112a) diverged from the gate line, a source electrode(118a) diverged from the data line, and a drain electrode(120) facing the source electrode. A protection film is formed in the front of a substrate including the data line and the TFT. An organic insulating film is formed in the upper part of the protection film. A pixel electrode(136) is formed in the upper part of the organic insulating film and has a finger portion(126c) having a structure that the finger portion is folded parallel with the common electrode one time. |
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A gate line(112) is formed on a substrate. A common electrode has a common line(126) and a ring portion(126b). The common line is formed in parallel with the gate line. The ring portion is diverged from the common line, has a ring structure that the ring portion is folded one time, and defines a pixel area. A data line(118) is formed to cross the data line vertically. A TFT(Thin Film Transistor) has a gate electrode(112a) diverged from the gate line, a source electrode(118a) diverged from the data line, and a drain electrode(120) facing the source electrode. A protection film is formed in the front of a substrate including the data line and the TFT. An organic insulating film is formed in the upper part of the protection film. A pixel electrode(136) is formed in the upper part of the organic insulating film and has a finger portion(126c) having a structure that the finger portion is folded parallel with the common electrode one time.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING FREQUENCY-CHANGING NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF |
| title | THIN FILM TRANSISTOR ARRAY SUBSTRATE OF AND METHOD FOR FABRICATING THE SAME |
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