THIN FILM TRANSISTOR ARRAY SUBSTRATE OF AND METHOD FOR FABRICATING THE SAME

A horizontal field-type TFT array substrate is provided to prevent color inversion, secure a high aperture ratio by the data line of a linear structure and to prevent signal delay by reducing data line, thereby improving image quality. A gate line(112) is formed on a substrate. A common electrode ha...

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Bibliographische Detailangaben
1. Verfasser: LEE, JOON YOUP
Format: Patent
Sprache:eng
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Zusammenfassung:A horizontal field-type TFT array substrate is provided to prevent color inversion, secure a high aperture ratio by the data line of a linear structure and to prevent signal delay by reducing data line, thereby improving image quality. A gate line(112) is formed on a substrate. A common electrode has a common line(126) and a ring portion(126b). The common line is formed in parallel with the gate line. The ring portion is diverged from the common line, has a ring structure that the ring portion is folded one time, and defines a pixel area. A data line(118) is formed to cross the data line vertically. A TFT(Thin Film Transistor) has a gate electrode(112a) diverged from the gate line, a source electrode(118a) diverged from the data line, and a drain electrode(120) facing the source electrode. A protection film is formed in the front of a substrate including the data line and the TFT. An organic insulating film is formed in the upper part of the protection film. A pixel electrode(136) is formed in the upper part of the organic insulating film and has a finger portion(126c) having a structure that the finger portion is folded parallel with the common electrode one time.