METHOD FOR FABRICATING A CONTACT HOLE OF SEMICONDUCTOR DEVICE

A method for forming a contact hole of a semiconductor device is provided to avoid generation of an undercut and improve the profile of a contact hole by forming a contact hole after a TEOS layer of around 1000 Å is formed. An insulation layer having a thickness of 800-1500 Å is formed on a silicon substrate(101). Photoresist(103) is deposited on the insulation layer and is selectively patterned to define a contact region. The insulation layer is selectively removed to expose a predetermined portion of the surface of the silicon substrate so that a contact hole(104) is formed. A metal silicide layer is formed on the silicon substrate under the contact hole. The insulation layer can be a TEOS layer(102).