CAPACITOR OF NON VOLATILE MEMORY DEVICE
A capacitor of a non-volatile memory device is provided to increase capacitance within the same size by forming two capacitors connected in parallel to each other within an area of one capacitor. A gate is formed by laminating a gate insulating layer, a floating gate, a dielectric layer(114), and a...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A capacitor of a non-volatile memory device is provided to increase capacitance within the same size by forming two capacitors connected in parallel to each other within an area of one capacitor. A gate is formed by laminating a gate insulating layer, a floating gate, a dielectric layer(114), and a control gate on a substrate. A first contact plug is connected to the substrate. A second contact plug is connected to the floating gate. A third contact plug is connected to the control gate. A first metal line(118A) is connected to the first contact plug and the third contact plug. A second metal line(118B) is connected to the second contact plug. The second contact plug is electrically separated from the control gate. |
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