REACTOR FOR HYDRIDE VAPOR PHASE EPITAXY WITH DOUBLE HEATING SYSTEM

A reactor for a hydride vapor phase epitaxy with a double heating system is provided to separately perform a temperature control with respect to a source zone and a growth zone by using a main quartz reaction pipe and a sub quartz reaction pipe. A reactor includes an electric furnace(1) and a quartz reaction pipe having a source zone and a growth zone. The quarts reaction pipe is divided into a main quartz reaction pipe(3) and a sub quartz reaction pipe(2). The main quartz reaction pipe is resistance-heated in the source zone. The sub quartz reaction pipe is induction-heated in the growth zone. An ammonia gas spraying device having a plurality of spraying tubes is installed on the growth zone which is induction-heated. The main quartz reaction pipe is installed in an inner of the electric furnace and has a rectangular shape. The sub quartz reaction pipe is exposed to an outside of the electric furnace. Alternatively, the main quartz reaction pipe and the sub quarts reaction pipe are integrated with each other.