METHOD FOR IMPROVING READ DISTURB CHARACTERISTICS OF NAND FLASH MEMORY ARRAY

A method for reading a flash memory array to improve read disturb characteristics is provided to improve the read disturb characteristics of memory cells with high coupling rate, by applying a second read voltage larger than a first read voltage to word lines of memory cells with large coupling ratio adjacent to a string selection transistor and a ground selection transistor and applying the first read voltage to a word line of the other unselected memory cells. According to a method for reading a flash memory cell including a string selection transistor, a number of memory cells and at least one cell string connected to a ground selection transistor directly, a ground voltage is applied to a word line of the selected memory cell. A read voltage is applied to gates of the string selection transistor and the ground selection transistor and the word lines of the memory cells. The read voltage varies according to the position of the unselected memory cells.