NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE

NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE

A nitride semiconductor light emitting device is provided to enhance light emitting efficiency by reducing an operational voltage. An n-type nitride semiconductor layer(120) is formed on a substrate(100). An active layer(130) is formed on a part of the n-type nitride semiconductor layer. A p-type ni...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: SHIM, HYUN WOOK, JEON, DONG MIN, KANG, JOONG SEO
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A nitride semiconductor light emitting device is provided to enhance light emitting efficiency by reducing an operational voltage. An n-type nitride semiconductor layer(120) is formed on a substrate(100). An active layer(130) is formed on a part of the n-type nitride semiconductor layer. A p-type nitride semiconductor layer(140) is formed on the active layer. A p-type contact layer(150) doped with a p-type impurity of 1x10^20/cm^3 and more is formed on the p-type nitride semiconductor layer. A transparent oxide electrode(160) is formed on the p-type contact layer. A p-type electrode(170) is formed on the transparent oxide electrode. An n-type electrode(180) is formed on the n-type nitride semiconductor layer on which the active layer is not formed.