PROCESS FOR PRODUCING ZINC OXIDE THIN-FILM AND PRODUCTION APPARATUS

A method of forming on the surface of a flexible base material, such as a plastic, a highly transparent zinc oxide thin-film of high conductivity without essential requirement of impurity doping; and a thin-film production apparatus therefor. There is provided a method of forming a zinc oxide thin-f...

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Hauptverfasser:	KIJIMA KAZUHIRO, MATSUMOTO TAKASHI, HAGIHARA SHIGERU, ABE OSAMU, HIRAKI SATOSHI, IMAZU CHITAKE, FUJIKAWA YUICHIRO
Format:	Patent
Sprache:	eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	A method of forming on the surface of a flexible base material, such as a plastic, a highly transparent zinc oxide thin-film of high conductivity without essential requirement of impurity doping; and a thin-film production apparatus therefor. There is provided a method of forming a zinc oxide thin-film through reaction of oxygen radicals with zinc atoms on the surface of a base material disposed in a film forming chamber having been evacuated to vacuum, wherein the density of crystal defects being defects of an atomic arrangement of zinc oxide thin-film is controlled by the temperature of the base material to thereby achieve formation of a zinc oxide thin-film. For intentionally disordering of the regularity of the atomic arrangement of zinc oxide thin-film, it is preferred that film formation be conducted while maintaining the temperature of the base material at 400°C or below.