DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME

A display device and a method of manufacturing the display device are provided to plate the surface of a source line of a pixel to reduce the resistance of the source line so as to reduce power consumption of the display device. A semiconductor device includes a thin film transistor. The thin film t...

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Bibliographische Detailangaben
Hauptverfasser:	YAMAZAKI SHUNPEI, KOYAMA JUN, KUWABARA HIDEOKI, FUJIKAWA SAISHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FREQUENCY-CHANGING NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS SEMICONDUCTOR DEVICES TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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Beschreibung
Zusammenfassung:	A display device and a method of manufacturing the display device are provided to plate the surface of a source line of a pixel to reduce the resistance of the source line so as to reduce power consumption of the display device. A semiconductor device includes a thin film transistor. The thin film transistor includes a semiconductor layer formed on an insulating substrate, an insulating layer formed on the semiconductor layer and a gate electrode formed on the insulating layer. The semiconductor device further includes a pixel having a first n-channel thin film transistor(4312), a driving circuit having a second n-channel thin film transistor and a p-channel thin film transistor, and a terminal(4310). The first n-channel thin film transistor has a source line(4311) coated with material having resistance lower than the gate electrode. The terminal is coated with material having resistance lower than the gate electrode.