METHOD OF SEMICONDUCTOR WAFER BACK PROCESSING, METHOD OF SUBSTRATE BACK PROCESSING, AND RADIATION-CURABLE PRESSURE-SENSITIVE ADHESIVE SHEET

A method for processing the back surface of a semiconductor wafer is provided to prevent a pressure-sensitive adhesive tape from being separated from the front surface of the wafer even in a surface treatment process by performing a surface treatment on the back surface of the wafer while a cured pressure-sensitive adhesion layer is closely fixed to the front surface of the wafer. Radiation-curable pressure-sensitive adhesive tape is deposited on the front surface of a semiconductor wafer with unevenness, including a base film and a pressure-sensitive adhesion layer disposed on one surface of the base film. The back surface of the semiconductor wafer is ground while the radiation-curable pressure-sensitive adhesive sheet is attached to the front surface of the semiconductor wafer. Radiation is irradiated to the pressure-sensitive adhesive sheet to cure the pressure-sensitive adhesion layer, and a surface treatment is performed on the ground back surface of the semiconductor wafer. The pressure-sensitive adhesion layer can contain a radiation-curable acrylic polymer as a component wherein the radiation-curable acrylic polymer has a carbon-carbon double bond in a molecule.