THE UV LED WITH MANUFACTURING METHOD THEREOF

An UV LED and a manufacturing method thereof are provided to obtain excellent blue light by using a ZnO-based material instead of a GaN-based material. An n type thin film layer(20) for supplying electrons to an active layer is formed on a substrate(10). A p type thin film layer(40) for supplying holes to the active layer is formed on the n type thin film layer. A multi-quantum well layer(30) is formed between the n type and p type thin film layers to form the active layer having a quantum barrier and quantum well structure and to emit light through combination of the electrons and the holes. An n type electrode(22) and a p type electrode(42) are formed respectively on the n type thin film layer and the n type thin film layer to supply the external power to the n type thin film layer and the n type thin film layer. The multi-quantum well layer is formed by stacking the quantum barriers and the quantum wells to form UV light of an ZnO-based LED. The quantum barrier is formed with a compound of Zn1-yBeyO and Zn1-x-yMgxBeyO. The quantum well is made of a ZnO compound.