METHOD OF MAKING A DEEP JUNCTION FOR ELECTRICAL CROSSTALK REDUCTION OF AN IMAGE SENSOR

A deep junction manufacturing method for reducing an electrical crosstalk of an image sensor is provided to improve an image sensor and a corresponding substrate. A substrate(110) has a front surface and a rear surface, and a plurality of sensor elements(120) are formed on the front surface of the s...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: CHIANG SHANG YI, YANG DUN NIAN, WUU SHOU GWO, WANG CHUNG
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A deep junction manufacturing method for reducing an electrical crosstalk of an image sensor is provided to improve an image sensor and a corresponding substrate. A substrate(110) has a front surface and a rear surface, and a plurality of sensor elements(120) are formed on the front surface of the substrate(110). Each of a plurality of the sensor elements(120) receives a beam oriented toward the rear surface. An aluminum doped feature is formed on the substrate(110). The aluminum doped feature is horizontally disposed between two adjacent elements among a plurality of the sensor elements(120) and is vertically disposed between a plurality of the sensor elements(120).