METHOD TO IMPROVE METAL DEFECTS IN SEMICONDUCTOR DEVICE FABRICATION

A method for improving metal defects in fabricating a semiconductor device is provided to deposit thick layers without defects by dividing a metal layer into separated layers and forming a stress compensation layer between the separated layers. A metal layer(115) is deposited on a semiconductor substrate and has a thickness of about 1 micron or greater. A first portion of the metal layer is deposited on the semiconductor substrate wherein the first portion has a compressive or tensile stress. A stress compensation layer(120) is disposed on the first portion and has an opposite stress to the compressive or tensile stress related with the first portion. A second portion of the metal layer is deposited on the stress compensation layer. The stress compensation layer includes titanium, tantalum, titanium nitride, tantalum nitride or a composition thereof, and the metal layer is aluminum, copper, gold, silver, platinum or a composition thereof.