METHOD OF FORMING SEMICONDUCTOR DEVICE HAVING A WIRING

METHOD OF FORMING SEMICONDUCTOR DEVICE HAVING A WIRING

A method for forming a semiconductor device having a wiring is provided to minimize voids within an opening by filling the opening with a metal layer. An insulating layer having an opening(16a) is formed on a semiconductor substrate(10). A first barrier layer(18) is conformally formed within the ope...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: CHEONG, SEONG HWEE, PARK, JIN HO, LEE, SANG WOO, YANG, SEUNG GIL, LEE, BRAD H
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A method for forming a semiconductor device having a wiring is provided to minimize voids within an opening by filling the opening with a metal layer. An insulating layer having an opening(16a) is formed on a semiconductor substrate(10). A first barrier layer(18) is conformally formed within the opening and on an upper surface of the insulating layer by using a CVD method. A second barrier layer(20) is formed on the semiconductor substrate by using a physical vapor deposition method. A part of the first barrier layer is exposed. The opening is filled with a metal layer(22) by using the chemical vapor deposition method. A wiring is formed by planarizing the metal layer, the second barrier layer, and the first barrier layer.