SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR FORMING THE SAME

SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR FORMING THE SAME

A semiconductor memory device and a fabricating method thereof are provided to improve the reliability of the semiconductor device by preventing short circuit between a metal contact and other metallization. A first insulating layer is formed on a semiconductor substrate(100) having a conductive reg...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: KIM, SUNG TAE, CHEONG, SEONG HWEE, PARK, JIN HO, LEE, BRAD H, LEE, SANG WOO, YANG, SEUNG GIL
Format: Patent
Sprache:eng
Schlagworte:
ELECTRICITY
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Beschreibung
Zusammenfassung:A semiconductor memory device and a fabricating method thereof are provided to improve the reliability of the semiconductor device by preventing short circuit between a metal contact and other metallization. A first insulating layer is formed on a semiconductor substrate(100) having a conductive region. A storage node pad(350) is formed on the first insulating layer, and is electrically connected to the semiconductor substrate. A contact pad(380) is formed on the first insulating layer, and is spaced apart from the storage node pad. A capacitor(500) is connected to the storage node pad. The capacitor has a bottom electrode(520) formed on the storage node pad, a dielectric layer(540) formed on the bottom electrode, and a top electrode(560) formed on the dielectric layer.