A PRECURSOR FOR ZIRCONIUM DIOXIDE THIN FILM DEPOSITION AND PREPARATION METHOD THEREOF

A PRECURSOR FOR ZIRCONIUM DIOXIDE THIN FILM DEPOSITION AND PREPARATION METHOD THEREOF

A precursor of zirconium dioxide is provided to improve thermal stability and volatility of the compound, thereby depositing high quality of zirconium dioxide thin film through the metal-organic chemical vapor deposition(MOCVD) or atomic layer deposition(ALD) method. A precursor of zirconium dioxide...

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Bibliographische Detailangaben
Hauptverfasser: KIM, JAW WAN, SHIN, JAE GWAN, PARK, JUNG WOO, KIM, JIN DONG, KIM, MYOUNG WOON, MIM, MIN HYEOK
Format: Patent
Sprache:eng
Schlagworte:
ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
ORGANIC CHEMISTRY
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Zusammenfassung:A precursor of zirconium dioxide is provided to improve thermal stability and volatility of the compound, thereby depositing high quality of zirconium dioxide thin film through the metal-organic chemical vapor deposition(MOCVD) or atomic layer deposition(ALD) method. A precursor of zirconium dioxide for deposition of zirconium dioxide thin film is represented by the formula(1), wherein A is NR^2R^3 or ER^4; E is oxygen or sulfur; R^1 is hydrogen, methyl or ethyl; R^2 and R^3 are each independently C1-C4 alkyl group optionally having a fluor group or SiR^5_3; R^4 is C1-C6 alkyl group optionally having a fluor group or SiR^5_3; and R^5 is C1-C4 alkyl group. The precursor of zirconium dioxide represented by the formula(1) is prepared by reacting a zirconium compound represented by the formula(2) with alkali metal salt of amide, alkali metal salt of alkoxide or alkali metal salt of thiolate represented by the formula(3): MA, wherein M is lithium, sodium or potassium and X is chlorine, bromine or iodine atom.