CONDUCTING METAL OXIDE WITH ADDITIVE AS P-MOS DEVICE ELECTRODE

Methods for fabricating high work function p-MOS device (10) metal electrodes are provided. In one embodiment, a method is provided for producing a metal electrode (13) including the steps of: providing a high k dielectric stack (12) with an exposed surface; contacting the exposed surface of the high k dielectric stack with a vapor of a metal oxide wherein the metal oxide is selected from the group consisting of RuO x, IrOx, ReOx, MoOx, WOx, VOx, and PdOx; and contacting the exposed surface of the dielectric stack (12) with a vapor of an additive selected from the group consisting of SiO2, Al2O3, HfO2, ZrO2, MgO, SrO, BaO, Y2O3, La2O3, and TiO2, whereby contacting the exposed surface of the dielectric stack (12) with the vapor of the metal oxide and the vapor of the additive forms an electrode (13) and wherein the additive is present at an amount between about 1 % to about 50 % by atomic weight percent in the electrode (13).