VERTICAL NANOWIRE GROWTH METHOD AT SELECTVE LOCATIONS, SEMICONDUCTOR NANODEVICE COMPRISING VERTICAL NANOWIRE, AND FABRICATION METHOD THEREOF

VERTICAL NANOWIRE GROWTH METHOD AT SELECTVE LOCATIONS, SEMICONDUCTOR NANODEVICE COMPRISING VERTICAL NANOWIRE, AND FABRICATION METHOD THEREOF

A method for growing nanowires is provided to solve both the limitation of conventional vertical transistor manufacture techniques and the limitation of nanowire integration by vertically growing silicon or compound semiconductor nanowires at desired positions on a silicon substrate. A method for gr...

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Bibliographische Detailangaben
Hauptverfasser: KUK, YOUNG, CHOI, JE HYUK, JUNG, HUN HUY
Format: Patent
Sprache:eng
Schlagworte:
MANUFACTURE OR TREATMENT THEREOF
NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS,MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES ASDISCRETE UNITS
NANOTECHNOLOGY
PERFORMING OPERATIONS
TRANSPORTING
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Zusammenfassung:A method for growing nanowires is provided to solve both the limitation of conventional vertical transistor manufacture techniques and the limitation of nanowire integration by vertically growing silicon or compound semiconductor nanowires at desired positions on a silicon substrate. A method for growing nanowires includes the steps of: patterning indents at desired positions(101) on a silicon substrate(105); depositing a metal on the bottoms of the indents; depositing an aluminum layer with predetermined thickness on the silicon substrate; subjecting the aluminum layer to anodizing to form an aluminum oxide layer(104) in which cylindrical holes are formed to expose the metal at the desired positions; and growing vertical nanowires through the cylindrical holes.