METHOD FOR FABRICATING THE SAME OF SEMICONDUCTOR DEVICE IN CONTACT HOLE OF HIGH ASPECT

METHOD FOR FABRICATING THE SAME OF SEMICONDUCTOR DEVICE IN CONTACT HOLE OF HIGH ASPECT

A method for manufacturing a high aspect ratio contact hole of a semiconductor device is provided to prevent an interlayer dielectric from being damaged by an inside top surface of the contact hole and a sacrifice layer of the interlayer dielectric, thereby preventing the upper place of the adjacent...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: HAN, SANG YEOP
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:A method for manufacturing a high aspect ratio contact hole of a semiconductor device is provided to prevent an interlayer dielectric from being damaged by an inside top surface of the contact hole and a sacrifice layer of the interlayer dielectric, thereby preventing the upper place of the adjacent contact holes from being connected. Interlayer dielectrics(32,34) are formed on a semiconductor substrate having a bottom plug. A first contact hole(36) is formed by etching the interlayer dielectric at a place where the bottom plug is formed. A sacrifice layer(37) is formed to fill the top portion of the interlayer dielectric(34) and the upper surface of the first contact hole. A second contact hole(36a) is formed by etching the first contact hole to expose the bottom plug.