PLASMA REACTOR APPARATUS WITH INDEPENDENT CAPACITIVE AND TOROIDAL PLASMA SOURCES

A plasma reactor apparatus including independent capacitive and toroidal plasma sources is provided to improve the uniformity of ion distribution over a wafer surface by introducing an ideal amount of a capacitively coupled power and make ion distribution in an ion generation region. A capacitively coupled plasma source power applicator(114) has a source power electrode of a ceiling(108) or a workpiece support(103), and a VHF power generator coupled to the capacitively coupled source power applicator. A second plasma source power applicator is one of an inductively coupled plasma source power applicator and a toroidal plasma source power applicator. An RF power generator is coupled to the inductively coupled plasma power applicator. A plasma bias power applicator has a first RF bias power generator coupled to the plasma bias power applicator. A process gas distribution device has a gas distribution showerhead in the ceiling. A first controller adjusts relative amounts of power simultaneously coupled to plasma in the chamber by the toroidal plasma source and the capacitively coupled plasma source power applicator.