PLASMA PROCESSING APPARATUS
A plasma processing apparatus is provided to prevent a deposit film from being formed on a surface of a ground electrode by disposing the ground electrode at a corner portion. A substrate processing chamber(11) has a space for processing with plasma at a surface of a substrate. An RF electrode(15) a...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A plasma processing apparatus is provided to prevent a deposit film from being formed on a surface of a ground electrode by disposing the ground electrode at a corner portion. A substrate processing chamber(11) has a space for processing with plasma at a surface of a substrate. An RF electrode(15) applies RF electrical power to the processing space, and a DC electrode applies a DC voltage to the processing space. At least portion of a ground electrode(47) is exposed in the substrate processing chamber. The ground electrode is disposed in a corner portion formed by intersecting internal surfaces in the substrate processing chamber. |
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