VERY NARROW BAND, TWO CHAMBER, HIGH REP RATE GAS DISCHARGE LASER SYSTEM

An injection seeded modular gas discharge laser system (2) capable of producing high quality pulsed beams at pulse rates of about 4,000 Hz or greater and at pulse energies of about 5 mJ or greater. Two separate discharge chambers are provided, one of which is a part of a master oscillator (10) produ...

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Hauptverfasser: ANDERSON STUART L, FOMENKOV IGOR V, SMITH SCOTT T, ERSHOV ALEXANDER I, PARTLO WILLIAM N, UJAZDOWSKI RICHARD C, ONKELS ECKEHARD D, HULBURD WILLIAM G, KNOWLES DAVID S, BROWN DANIEL J. W, NESS RICHARD M, MYERS DAVID W, DAS PLASH P, SANDSTROM RICHARD L, BESAUCELE HERVE A, OICLES JEFFREY
Format: Patent
Sprache:eng
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Zusammenfassung:An injection seeded modular gas discharge laser system (2) capable of producing high quality pulsed beams at pulse rates of about 4,000 Hz or greater and at pulse energies of about 5 mJ or greater. Two separate discharge chambers are provided, one of which is a part of a master oscillator (10) producing a very narrow band seed beam, which is amplified (12) in the second discharge chamber. The chambers can be controlled separately permitting separate optimization of wavelength parameters in the master oscillator and optimization of pulse energy parameters in the amplifying chamber. A preferred embodiment in the ArF excimer laser system configured as a MOPA and specifically designed for use as a light source for integrated circuit lithography. In the preferred MOPA embodiment, each chamber comprises a single tangential fan (10A) providing sufficient gas flow to permit operation at pulse rates of 4,000 Hz or greater by cleaning debris from the discharge region in less time that the approximately 0.25 milliseconds between pulses. The masters oscillation is equipped with a line narrowing package having a very fast tuning mirror capable of controlling centerline wavelength on a pulse-to-pulse basis at repetition rates of 4000 Hz or greater to a precision of less than 0.2 pm.