FABRICATION OF A FERROMAGNETIC INDUCTOR CORE AND CAPACITOR ELECTRODE IN A SINGLE PHOTO MASK STEP

FABRICATION OF A FERROMAGNETIC INDUCTOR CORE AND CAPACITOR ELECTRODE IN A SINGLE PHOTO MASK STEP

An integrated circuit capacitor having a bottom plate (50a), a dielectric layer (250'), and a ferromagnetic top plate (20a). Also, a method of manufacturing an integrated circuit on a semiconductor wafer. The method comprising forming a bottom plate of a capacitor (50a) and a bottom portion of...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: BRENNAN KENNETH D, RAO SATYAVOLU S. PAPA
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:An integrated circuit capacitor having a bottom plate (50a), a dielectric layer (250'), and a ferromagnetic top plate (20a). Also, a method of manufacturing an integrated circuit on a semiconductor wafer. The method comprising forming a bottom plate of a capacitor (50a) and a bottom portion of an induction coil (50a), forming an etch stop layer (250'), forming a ferromagnetic capacitor top plate (20a) and a ferromagnetic core (20b), forming a top portion of the induction coil (50b) plus vias (50c) that couple the top portion of the induction coil (50b) to the bottom portion of the induction coil (50c).